{"subject":"III-V Molecular Beam Epitaxy System","detailContent":"
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","dataClassName":"Nanofabrication","pubUnitName":"Instrumentation Resource Center ","posterDate":null,"updateDate":"2025-04-28","liaisonper":null,"liaisontel":null,"liaisonfax":null,"liaisonemail":null,"languageurl":null,"page1Title":"Instrument introduction","page1":"
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Instrument Information
\r\nChinese name: Group III and V Molecular Beam Epitaxy System
\r\nEnglish name: III-V Molecular Beam Epitaxy System
\r\nEnglish abbreviation: MBE
\r\nLabel: Veeco Modular GEN II solid source III-V MBE
\r\nInstrument Location: Room R110, 1st Floor, Solid-State Electronics Bldg., Guanfu Campus
\r\nPurchase Date: August 2004
\r\nDate of joining Guiyi: January 2015
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\r\nImportant Specifications
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  1. High Vacuum Growth chamber: Pressure < 5×10-10 torr
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  2. Source Material: Ga, Al, In, As, Sb.
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  3. Doping Source: Be, Si, Te
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  4. Max substrate Size: 3 inches
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  5. Epitaxy Layer thickness Variation < 5%
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  6. The highest growth temperature: 640℃
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  7. In-situ rsidual gas analysis (RGA) and reflection high energy electron diffraction (RHEED, 15kV):
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  8. Regular monitoring epitaxy layer growth rate and quality.
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","page2Title":"Service Items and System Open Level","page2":"
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service items
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  1. This system is an ultra-high vacuum system. In principle, it is not open to operate by itself, but it can be accompanied on site.
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  2. This system serves each wafer with 6 hours as a unit.
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  3. The applicant user must contact the professor or technician in charge of the instrument to confirm that the sample meets the requirements.
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  4. A maximum of 5 samples can be reserved per person at a time.
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  5. Cancellation must be notified one week in advance.
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\r\nSystem open level
\r\nAt present, only the entrusted service is open, and it is operated by the technicians of this laboratory.
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","page3Title":"Charges","page3":"
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Opening hours:This machine adopts entrusted reservation. If you need to make an appointment, please go to your instrument system to make an appointment.
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Charges
service itemsCharging standard (unit: NTD)
Arsenic sample commissionPlanning appointment: $4,000 /1µm
\r\n\t\t\tUnplanned appointment: $15,000 /1µm
Antimonide sample commissionPlanning appointment: $5,000 /1µm
\r\n\t\t\tUnplanned appointment: $25,000 /1µm
Special Structure Testing FeeAdditional correction fees ranging from 2-6µm will be charged according to the structural difficulty
Substrate costGaAs series: $7,000 / single chip
\r\n\t\t\tGaSb series: $25,000/single chip
\r\n\t\t\tInP series: $9,000 / single chip
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  1. The charging standard is calculated based on the sample growth thickness of 1 micron. The part exceeding 1 micron or more, if it is less than 1 micron, it will be calculated as 1 micron.
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  2. In order to maintain the stability of the system and ultra-high vacuum conditions, the request of the entruster to provide substrates is not accepted; the unit will provide the crystal growth substrates uniformly.
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  3. If you have other special requirements, please mail or call to discuss.
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  4. For those who need long-term entrusted services, long-term project discounts can be provided.
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  5. The unit can also assist in evaluating the feasibility of the structure and consulting services for growth proposals.
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","page4Title":"Test film restrictions and reservation method","page4":"
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Management methods and test strip restrictions
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  1. The substrates that can be grown are GaAs, InP, InAs, GaSb, and InSb.
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  2. After submitting the appointment form, the entrusted operator must contact the technician to determine the experimental time and growth content.
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\r\nInstrument reservation method
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  1. Instrument reservation
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  2. If you want to cancel the appointment, please contact the technician one week before and cancel online.
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  3. Submit the appointment application form, please take a photo or scan it and send it to the technician's mailbox
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