Link to Content Area

NYCU Office of Research and Development

List of Instruments

  • Nanofabrication

  • Update Date:2025-04-11
  • Units:Instrumentation Resource Center
III-V Molecular Beam Epitaxy System
Group III or Five Molecular Beam Epitaxy System
  • III-V MOLECULAR BEAM EPITAXY SYSTEM
    Brand Model: Veeco Modular GEN II solid source III-V MBE
  • Instrument expert: Prof. Lin Sheng-Di
    ext 31240
    Email sdlin@mail.nctu.edu.tw
  • Instrument consulting and operation services: Ms. Wu, Chu-Chun
    Extension 54248, 55665
    Email isabelwu@nycu.edu.tw
  • Instrument location: Room R110, 1st Floor, Solid-State Electronics Bldg., Guanfu Campus
Instrument Information
Chinese name: Group III and V Molecular Beam Epitaxy System
English name: III-V Molecular Beam Epitaxy System
English abbreviation: MBE
Label: Veeco Modular GEN II solid source III-V MBE
Instrument Location: Room R110, 1st Floor, Solid-State Electronics Bldg., Guanfu Campus
Purchase Date: August 2004
Date of joining Guiyi: January 2015

Important Specifications
  1. High Vacuum Growth chamber: Pressure < 5×10-10 torr
  2. Source Material: Ga, Al, In, As, Sb.
  3. Doping Source: Be, Si, Te
  4. Max substrate Size: 3 inches
  5. Epitaxy Layer thickness Variation < 5%
  6. The highest growth temperature: 640℃
  7. In-situ rsidual gas analysis (RGA) and reflection high energy electron diffraction (RHEED, 15kV):
  8. Regular monitoring epitaxy layer growth rate and quality.
service items
  1. This system is an ultra-high vacuum system. In principle, it is not open to operate by itself, but it can be accompanied on site.
  2. This system serves each wafer with 6 hours as a unit.
  3. The applicant user must contact the professor or technician in charge of the instrument to confirm that the sample meets the requirements.
  4. A maximum of 5 samples can be reserved per person at a time.
  5. Cancellation must be notified one week in advance.

System open level
At present, only the entrusted service is open, and it is operated by the technicians of this laboratory.
Opening hours:This machine adopts entrusted reservation. If you need to make an appointment, please go to your instrument system to make an appointment.
Charges
service items Charging standard (unit: NTD)
Arsenic sample commission Planning appointment: $4,000 /1µm
Unplanned appointment: $15,000 /1µm
Antimonide sample commission Planning appointment: $5,000 /1µm
Unplanned appointment: $25,000 /1µm
Special Structure Testing Fee Additional correction fees ranging from 2-6µm will be charged according to the structural difficulty
Substrate cost GaAs series: $7,000 / single chip
GaSb series: $25,000/single chip
InP series: $9,000 / single chip

   
  1. The charging standard is calculated based on the sample growth thickness of 1 micron. The part exceeding 1 micron or more, if it is less than 1 micron, it will be calculated as 1 micron.
  2. In order to maintain the stability of the system and ultra-high vacuum conditions, the request of the entruster to provide substrates is not accepted; the unit will provide the crystal growth substrates uniformly.
  3. If you have other special requirements, please mail or call to discuss.
  4. For those who need long-term entrusted services, long-term project discounts can be provided.
  5. The unit can also assist in evaluating the feasibility of the structure and consulting services for growth proposals.
Management methods and test strip restrictions
  1. The substrates that can be grown are GaAs, InP, InAs, GaSb, and InSb.
  2. After submitting the appointment form, the entrusted operator must contact the technician to determine the experimental time and growth content.

Instrument reservation method
  1. Instrument reservation
  2. If you want to cancel the appointment, please contact the technician one week before and cancel online.
  3. Submit the appointment application form, please take a photo or scan it and send it to the technician's mailbox
gotop