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中文Research Highlights
- Publish Date：2025-09-22
NYCU and TSMC, ITRI, Stanford Team Achieve Breakthrough in Next-Gen MRAM for AI and Low-Power Applications
The research team significantly enhanced the phase stability of tungsten through an innovative design of material layers.
By National Science and Technology Council
Edited by Chance Lai
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Edited by Chance Lai
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In a significant cross-institutional advance, National Yang Ming Chiao Tung University (NYCU) has joined forces with Taiwan Semiconductor Manufacturing Company (TSMC), the Industrial Technology Research Institute (ITRI), the National Synchrotron Radiation Research Center (NSRRC), Stanford University, and National Chung Hsing University (NCHU) to overcome a critical materials challenge in spin–orbit torque magnetic random-access memory (SOT-MRAM)—a next-generation non-volatile memory technology.
Led by NYCU Assistant Professor Yen-Lin Huang with support from Taiwan’s National Science and Technology Council (NSTC), the team has developed a breakthrough solution to stabilize β-phase tungsten (β-W), a key material in SOT-MRAM, under high-temperature processing conditions—paving the way for ultrafast, energy-efficient, and commercially viable memory chips.
Published in Nature Electronics under the title “A 64-kilobit spin–orbit torque magnetic random-access memory based on back-end-of-line-compatible β-tungsten”, this work highlights Taiwan’s growing innovation leadership in advanced memory systems and semiconductors. It opens the door for transformative applications in large language models (LLMs), artificial intelligence computing, mobile devices (with extended battery life and enhanced data security), as well as automotive electronics and data centers (with improved reliability and reduced energy consumption).
A Decade-Long Puzzle in Memory Design—Finally Cracked
Modern computing relies on two broad types of memory: fast but volatile (like DRAM and SRAM), and non-volatile but slower (like Flash). For years, scientists around the world have sought a memory solution that combines the best of both worlds—high speed and long-term stability. Various contenders have emerged—PCM, STT-MRAM, FeRAM—but have consistently faced limitations in switching speed, endurance, or power consumption.
That changed with this latest Taiwan-led advance. The research team introduced a novel material layer design that significantly stabilizes the β-phase of tungsten (W), a key material in SOT-MRAM. This stability was achieved even under high-temperature semiconductor processing, while preserving a strong spin–orbit torque effect.
Led by NYCU Assistant Professor Yen-Lin Huang with support from Taiwan’s National Science and Technology Council (NSTC), the team has developed a breakthrough solution to stabilize β-phase tungsten (β-W), a key material in SOT-MRAM, under high-temperature processing conditions—paving the way for ultrafast, energy-efficient, and commercially viable memory chips.
Published in Nature Electronics under the title “A 64-kilobit spin–orbit torque magnetic random-access memory based on back-end-of-line-compatible β-tungsten”, this work highlights Taiwan’s growing innovation leadership in advanced memory systems and semiconductors. It opens the door for transformative applications in large language models (LLMs), artificial intelligence computing, mobile devices (with extended battery life and enhanced data security), as well as automotive electronics and data centers (with improved reliability and reduced energy consumption).
A Decade-Long Puzzle in Memory Design—Finally Cracked
Modern computing relies on two broad types of memory: fast but volatile (like DRAM and SRAM), and non-volatile but slower (like Flash). For years, scientists around the world have sought a memory solution that combines the best of both worlds—high speed and long-term stability. Various contenders have emerged—PCM, STT-MRAM, FeRAM—but have consistently faced limitations in switching speed, endurance, or power consumption.
That changed with this latest Taiwan-led advance. The research team introduced a novel material layer design that significantly stabilizes the β-phase of tungsten (W), a key material in SOT-MRAM. This stability was achieved even under high-temperature semiconductor processing, while preserving a strong spin–orbit torque effect.
The breakthrough is the first to demonstrate:
- A 64-kilobit SOT-MRAM array integrated with CMOS control circuitry
- Ultrafast switching speeds (as fast as one nanosecond)
- Data retention exceeding 10 years
- Low power consumption, suitable for energy-critical applications
From Lab to Market: The Future of Memory Is Within Reach
This milestone brings SOT-MRAM significantly closer to real-world deployment. As a high-speed, low-power, and non-volatile memory technology, it could become a game-changing enabler across multiple industries:
This milestone brings SOT-MRAM significantly closer to real-world deployment. As a high-speed, low-power, and non-volatile memory technology, it could become a game-changing enabler across multiple industries:
- Artificial Intelligence & LLMs: Improving data throughput and energy efficiency
- Mobile Devices: Enhancing battery life and protecting sensitive data
- Automotive Electronics & Data Centers: Delivering better reliability under thermal stress, with reduced energy demands
The study not only affirms Taiwan’s global leadership in cutting-edge semiconductor R&D but also unlocks new possibilities for memory innovation amid the data explosion of the AI era.
The research team, led by Assistant Professor Yen-Lin Huang (center).
The research team, led by Assistant Professor Yen-Lin Huang (center).Related Image(s)：
